IMPERFECTIONS AND RESONANT TUNNELING IN QUANTUM-WELL HETEROSTRUCTURES

被引:11
作者
POTZ, W
LI, ZQ
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D O I
10.1016/0038-1101(89)90239-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1353 / 1357
页数:5
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共 10 条
[1]  
[Anonymous], 1983, GREENS FUNCTIONS QUA
[2]  
BAUER G, 1986, 2 DIMENSIONAL SYSTEM
[3]   ELECTRONIC-PROPERTIES OF A REALISTIC MODEL OF AMORPHOUS-SILICON [J].
BOSE, SK ;
WINER, K ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1988, 37 (11) :6262-6277
[4]   RELATION BETWEEN CONDUCTIVITY AND TRANSMISSION MATRIX [J].
FISHER, DS ;
LEE, PA .
PHYSICAL REVIEW B, 1981, 23 (12) :6851-6854
[5]  
LI Z, UNPUB
[6]   RESONANT TUNNELING THROUGH AMORPHOUS-SILICON SILICON-NITRIDE DOUBLE-BARRIER STRUCTURES [J].
MIYAZAKI, S ;
IHARA, Y ;
HIROSE, M .
PHYSICAL REVIEW LETTERS, 1987, 59 (01) :125-127
[7]   TETRAHEDRALLY COORDINATED RANDOM-NETWORK STRUCTURE [J].
POLK, DE ;
BOUDREAUX, DS .
PHYSICAL REVIEW LETTERS, 1973, 31 (02) :92-95
[8]  
POTZ W, 1989, IN PRESS J APPL PHYS
[9]   DISORDER EFFECTS ON RESONANT TUNNELING IN DOUBLE-BARRIER QUANTUM WELLS [J].
SCHULZ, PA ;
DASILVA, CETG .
PHYSICAL REVIEW B, 1988, 38 (15) :10718-10723
[10]  
WEAIRE D, 1981, SPRINGER SERIES SOLI, V25, P155