EXPERIMENTAL STUDIES OF THE GE-SB-SE SYSTEM

被引：42

作者：

ABDELRAHIM, MA ^{[1
]}

MOHARRAM, AH ^{[1
]}

DONGOL, M ^{[1
]}

HAFIZ, MM ^{[1
]}

机构：

[1] ASSIUT UNIV,DEPT PHYS,QENA,EGYPT

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1990年 / 51卷 / 04期

关键词：

activation energy; DSC thermogram; electrical conductivity; Ge-Sb-Se system; X-ray diffractogram;

D O I：

10.1016/0022-3697(90)90119-Z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A systematic study was made of the semiconducting chalchogenide glass system Ge20SbxSe80-x with 5 < x < 40 at.%. The dependence of the electrical conductivity of bulk specimens on the temperature revealed the role of both the Sb content and the annealing temperature. X-Ray examination as well as differential scanning calorimeter analyses (DSC) were helpful in the identification of the structural changes. The characteristics of the lone pair amorphous semiconductor seem to account for the observed dependence of the localized density of states, N(E), at the Fermi energy, on the annealing temperature. © 1990.

引用

页码：355 / 359

页数：5

共 10 条

[1]

Fritzsche H., 1974, AMORPHOUS LIQUID SEM, P221

[2]

FRUMER M, 1975, J NONCRYST SOLIDS, V16, P175

[3] ELECTRICAL-PROPERTIES OF GE-SB-SE GLASSES [J].