QUASI-DONOR-ACCEPTOR PAIR PHOTOLUMINESCENCE EMISSION IN GAXIN1-XAS/INP

被引：23

作者：

YU, PW

PENG, CK

MORKOC, H

机构：

[1] DEPT ELECT ENGN,URBANA,IL 61801

[2] COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342811

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2427 / 2430

页数：4

共 24 条

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[7] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

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[8] GROWTH OF IN0.53GA0.47AS AND INP ON INP SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

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[9]

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[10] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J].

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