THE MULTI-HOLE LOCALIZATION MECHANISM FOR PARTICLE-EMISSION FROM SEMICONDUCTOR SURFACES

被引：15

作者：

KHOO, GS ^{[1
]}

ONG, CK ^{[1
]}

ITOH, N ^{[1
]}

机构：

[1] NAGOYA UNIV,FAC SCI,DEPT PHYS,CHIKUSA KU,NAGOYA 46401,JAPAN

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1993年 / 5卷 / 09期

关键词：

D O I：

10.1088/0953-8984/5/9/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the consequences of multi-hole localization at defect sites on the GaP(110) surface: the relaxation of the lattice and the emission of atoms due to bond breaking. It is shown that the combination of localization of two-hole states on a defect with cascade excitation results in emission of an atom from the defect. The results support the mechanism suggested by Hattori et al of defect-initiated emission of Ga atoms under laser irradiation, of which the yield is a superlinear function of laser fluence.

引用

页码：1187 / 1194

页数：8

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