SATURATION OF IMPURITY PHOTOCONDUCTIVITY IN N-GAAS WITH INTENSE YAG LASER LIGHT

被引：18

作者：

CELLER, GK ^{[1
]}

MISHRA, S ^{[1
]}

BRAY, R ^{[1
]}

机构：

[1] PURDUE UNIV,PHYS DEPT,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 05期

关键词：

D O I：

10.1063/1.88453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：297 / 299

页数：3

共 14 条

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HO, CT .

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[7]

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[8] OBSERVATION OF 2-PHOTON CONDUCTIVITY IN GAAS WITH NANOSECOND AND PICOSECOND LIGHT-PULSES [J].

JAYARAMAN, S ;

LEE, CH .

APPLIED PHYSICS LETTERS, 1972, 20 (10) :392-+

[9] 2-PHOTON ABSORPTION OF ND LASER RADIATION IN GAAS [J].

KLEINMAN, DA ;

MILLER, RC ;

NORDLAND, WA .

APPLIED PHYSICS LETTERS, 1973, 23 (05) :243-244

[10] SATURATION OF OPTICAL ABSORPTION IN GAAS [J].

MICHEL, AE ;

NATHAN, MI .

APPLIED PHYSICS LETTERS, 1965, 6 (06) :101-&

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