GROWTH OF SINGLE-CRYSTAL MATERIALS FROM HIGH-TEMPERATURE SOLUTIONS

被引:3
作者
POLLERT, E
NEVRIVA, M
DURCOK, S
机构
[1] Institute of Physics Czecholovak Academy of Sciences, 180 40 Prague 8
来源
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1991年 / 22卷 / 03期
关键词
D O I
10.1016/0960-8974(91)90001-S
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
There are two principle factors influencing the growth of crystals from high temperature solutions, the experimental arrangement and properties of the melt. Problems of the experimental arrangement, particularly of various techniques producing supersaturation, are discussed in the first part of article. Further an emphasize is laid on optimization of the temperature distribution in the melt in stationary state and when the accelerated crucible rotation technique is applied. Various growing modes allowing to restrict the number of arising crystals are compared. The second part is devoted to the properties of melts, methods of the determination of the liquidus and crystallization temperatures, thermodynamic of melts and to the study of growth kinetics by LPE experiments.
引用
收藏
页码:143 / 182
页数:40
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