ANISOTROPIC TRANSPORT-PROPERTIES OF IN-PLANE-ALIGNED A-AXIS YBA2CU3O7 FILMS

被引：63

作者：

SUZUKI, Y ^{[1
]}

LEW, D ^{[1
]}

MARSHALL, AF ^{[1
]}

BEASLEY, MR ^{[1
]}

GEBALLE, TH ^{[1
]}

机构：

[1] STANFORD UNIV,CTR MAT RES,STANFORD,CA 94305

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.48.10642

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have grown a-axis YBa2Cu3O7 films aligned in the plane of the substrate (100) LaSrGaO4 by off-axis sputtering. X-ray and TEM analysis show a single predominant orientation of the b and c axes in these films. In-plane texture x-ray scans and Rutherford backscattering spectroscopy channeling reveal good crystalline quality. TEM analysis shows antiphase boundaries in the [010] direction and stacking fault boundaries in the [001] direction. We obtain an anisotropy ratio in resistivity of 8. The anisotropy in resistivity as well as in critical current density is less than that in single crystals. The reduction can be accounted for by the small percentage of misoriented grains in these films. We also investigate the resistive properties of antiphase boundaries and stacking fault boundaries. The field dependence of the critical current density in the [010] and [001] directions is similar to that of c-axis films, which is known not to be weak link limited.

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页码：10642 / 10645

页数：4

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