STRESS-CONCENTRATION STRUCTURE WITH FRONT BEAM FOR PRESSURE SENSOR

被引:20
作者
BAO, MH
YU, LZ
WANG, Y
机构
[1] Department of Electronic Engineering, Fudan University, Shanghai
关键词
D O I
10.1016/0924-4247(91)85019-K
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The beam-diaphragm structure is a new type of stress concentration structure in which the stress concentration areas are separated for positive and negative stresses. Geometric design considerations for beam-diaphragm structures have been investigated theoretically and experimentally. According to the results of finite-element analysis and experimental measurements, geometric design rules for maximum sensitivity are given. Experimental results of the dependence of the non-linearity on the beam width, W2, are also presented.
引用
收藏
页码:105 / 112
页数:8
相关论文
共 17 条
[1]  
BAO MH, 1987, SENSOR ACTUATOR, V12, P49
[2]   GEOMETRIC DESIGN RULES OF 4-TERMINAL GAUGE FOR PRESSURE SENSORS [J].
BAO, MH ;
QI, WJ ;
WANG, Y .
SENSORS AND ACTUATORS, 1989, 18 (02) :149-156
[3]   MICROMACHINED BEAM-DIAPHRAGM STRUCTURE IMPROVES PERFORMANCES OF PRESSURE TRANSDUCER [J].
BAO, MH ;
YU, LZ ;
WANG, Y .
SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) :137-141
[4]  
CHAU H, 1985, 3RD P INT C SOL STAT, P174
[5]   PRESSURE SENSITIVITY IN ANISOTROPICALLY ETCHED THIN-DIAPHRAGM PRESSURE SENSORS [J].
CLARK, SK ;
WISE, KD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1887-1896
[6]  
GIELES ACM, 1973, PHILIPS TECH REV, V33, P14
[7]  
Gragg J. E., 1984, IEEE SOL STAT SENS W, P21
[8]   HALL-EFFECT DEVICES AS STRAIN AND PRESSURE SENSORS [J].
KANDA, Y ;
YASUKAWA, A .
SENSORS AND ACTUATORS, 1982, 2 (03) :283-296
[9]  
KO WH, 1979, IEEE T ELECTRON DEV, V26, P1896, DOI 10.1109/T-ED.1979.19793
[10]   LOW-PRESSURE SENSORS EMPLOYING BOSSED DIAPHRAGMS AND PRECISION ETCH-STOPPING [J].
MALLON, JR ;
POURAHMADI, F ;
PETERSEN, K ;
BARTH, P ;
VERMEULEN, T ;
BRYZEK, J .
SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) :89-95