PULSED EXCIMER LASER DEPOSITION Y1BA2CU3O7-X SUPERCONDUCTOR FILMS ON SILICON WITH LASER-DEPOSITED Y-ZRO2 BUFFER LAYER

被引：24

作者：

OGALE, SB

VISPUTE, RD

RAO, RR

机构：

[1] Centre for Advanced Studies in Materials Science and Solid State Physics, Department of Physics, University of Poona

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 17期

关键词：

D O I：

10.1063/1.104142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The pulsed excimer laser ablation method is used to deposit both the buffer layer of Y-stabilized ZrO2 and the overlayer of Y1Ba 2Cu3O7-x superconductor on (100) oriented single-crystal silicon. Process parameter optimization study is carried out and it is shown that a thin film of the superconductor (0.5-0.7 μm) having a zero resistance temperature of 86 K can be obtained using a 0.3 μm buffer layer deposited at substrate temperatures between 600 and 800°C.

引用

页码：1805 / 1807

页数：3

共 18 条

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