CHARACTERIZATION OF A POSITIVE-TONE WET SILYLATION PROCESS WITH THE AZ 5214TM PHOTORESIST

被引：3

作者：

GOGOLIDES, E

YANNAKOPOULOU, K

NASSIOPOULOS, AG

TSOIS, E

HATZAKIS, M

机构：

[1] National Centre for Scientific Research NCSR Demokritos PO Box 60228, Agia Paraskevi

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90069-H

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A liquid phase (wet) silylation process has been developed1 using the commercial photoresist AZ 5214TM, and I-line lithography. Here, the process is characterized using proton NMR (Nuclear Magnetic Resonance) spectroscopy, and SEM analysis of fabricated submicron patterns.

引用

页码：263 / 266

页数：4

共 7 条

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