HIGHLY ANISOTROPIC SELECTIVE REACTIVE ION ETCHING OF DEEP TRENCHES IN SILICON

被引:23
作者
YUNKIN, VA
FISCHER, D
VOGES, E
机构
[1] Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka
[2] Universität Dortmund, D-44221 Dortmund
关键词
Deep trenches - Directional plasma based silicon etching - Reactive ion etching;
D O I
10.1016/0167-9317(94)90176-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reactive ion etching (RIE) of single crystal silicon using a gas mixture of SF6 and C2Cl3F3 in parallel plate electrode reactor was investigated. A detailed study of etching characteristics as functions of gas composition, rf power, pressure, self-bias voltage was performed. The results were explored in order to optimize deep trench RIE process. The optimized process resulted in a high etch rate, a good selectivity silicon-to-photoresist, a high anisotropy, a nearly vertical etch profile, and smooth surface morphology. This process was successfully used to fabricate silicon preforms for a replication technology of polymer-based devices.
引用
收藏
页码:373 / 376
页数:4
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