COMPARISON OF THE SIDEWALL RECOMBINATION IN DRY AND WET ETCHED INGAAS/INP WIRES

被引：11

作者：

JACOBS, B

ZULL, H

FORCHEL, A

GYURO, I

SPEIER, P

ZIELINSKI, E

机构：

[1] Technische Physik, Universität Würzburg

[2] SEL-Alcatel Research Center

[3] IBM Research Laboratory, CH Rüschlikon

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90100-J

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet and dry etched InGaAs/InP wires with widths between 60 nm and 10 mum for a wide range of excitation densities. While we obtain a large sidewall recombination velocity in the range of 10(7) cm/sec at low excitation density, the decay of the emission intensity with decreasing wire width is completely suppressed at higher excitation density due to the saturation of nonradiative recombination centers. Varying the bias voltage of the dry etching process from 80 V up to 300 V we observe a significant increase of the sidewall recombination of dry etched structures at ion energies above 200 eV.

引用

页码：401 / 404

页数：4