BIEXCITONS IN INDIRECT-GAP SEMICONDUCTORS - APPLICATIONS TO GASE AND AGBR

被引：10

作者：

QUATTROPANI, A

FORNEY, JJ

BASSANI, F

机构：

[1] ECOLE POLYTECH FED LAUSANNE,LAB PHYS APPL,LAUSANNE,SWITZERLAND

[2] UNIV ROME,IST FIS,ROME,ITALY

[3] ECOLE POLYTECH FED LAUSANNE,LAB PHYS THEORIQUE,LAUSANNE,SWITZERLAND

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1975年 / 70卷 / 02期

关键词：

D O I：

10.1002/pssb.2220700208

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：497 / 504

页数：8

共 20 条

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[7] BENOITALAGUILLA.C, 1970, J LUMIN, V1, P315
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