TEMPERATURE-DEPENDENCE OF THE QUANTUM HALL RESISTANCE

被引：92

作者：

CAGE, ME

FIELD, BF

DZIUBA, RF

GIRVIN, SM

GOSSARD, AC

TSUI, DC

机构：

[1] NBS,CTR CHEM PHYS,DIV SURFACE SCI,WASHINGTON,DC 20234

[2] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544

[3] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.30.2286

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2286 / 2288

页数：3

共 12 条

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[2] DISSIPATION AND DYNAMIC NON-LINEAR BEHAVIOR IN THE QUANTUM HALL REGIME [J].

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[4]

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[5]

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[6] HALL VOLTAGE DEPENDENCE ON INVERSION-LAYER GEOMETRY IN THE QUANTUM HALL-EFFECT REGIME [J].

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[7]

TAUSENDFREUND B, UNPUB SURF SCI

[8] ZERO-RESISTANCE STATE OF TWO-DIMENSIONAL ELECTRONS IN A QUANTIZING MAGNETIC-FIELD [J].

TSUI, DC ;

STORMER, HL ;

GOSSARD, AC .

PHYSICAL REVIEW B, 1982, 25 (02) :1405-1407

[9] DETERMINATION OF THE FINE-STRUCTURE CONSTANT USING GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

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DZIUBA, RF .

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[10]

VONKLITZING K, 1980, PHYS REV LETT, V45, P494, DOI 10.1103/PhysRevLett.45.494

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