PROBE BEAM HEATING OF ALGAAS SINGLE-QUANTUM-WELL LASER FACETS IN RAMAN MICROPROBE SPECTROSCOPY

被引：17

作者：

TANG, WC ^{[1
]}

ROSEN, HJ ^{[1
]}

BUCHMANN, P ^{[1
]}

VETTIGER, P ^{[1
]}

WEBB, D ^{[1
]}

机构：

[1] IBM CORP,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.346923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The facet temperature of AlGaAs single-quantum-well laser diodes were examined via Raman microprobe spectroscopy. The facets were fabricated either by cleaving in air or by chemically assisted ion-beam etching. The ridge width was 5 μm. Large sample-dependent variations in the heating induced by the argon probe beam are observed. These variations correlate with the appearance of disorder-induced modes in the Raman spectrum and the bias current-induced heating of the laser facet.

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页码：5930 / 5932

页数：3

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