COMPLEX PATTERN OF IMPURITY STATES IN SHALLOW SEMICONDUCTOR QUANTUM-WELLS

被引：1

作者：

PASQUARELLO, A ^{[1
]}

BASTARD, G ^{[1
]}

机构：

[1] ECOLE POLYTECH, LPMC, F-75230 PARIS 05, FRANCE

来源：

EUROPHYSICS LETTERS | 1991年 / 15卷 / 04期

关键词：

ELECTRON STATES IN LOW-DIMENSIONAL STRUCTURES (INC QUANTUM WELLS; SUPERLATTICES; LAYER STRUCTURES AND INTERCALATION COMPOUNDS);

D O I：

10.1209/0295-5075/15/4/014

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electronic states bound to impurities located in the quantum well barriers are calculated when the bulk binding energy is comparable to the quantum well depth. We show the existence of a complex level pattern due to the interaction between barrierlike states and states which are essentially confined in the well. The effects of an electric field are also discussed.

引用

页码：447 / 451

页数：5

共 9 条

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