LOW SERIES RESISTANCE HIGH-EFFICIENCY GAAS ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH CONTINUOUSLY GRADED MIRRORS GROWN BY MOCVD

被引：82

作者：

ZHOU, P ^{[1
]}

CHENG, J ^{[1
]}

SCHAUS, CF ^{[1
]}

SUN, SZ ^{[1
]}

ZHENG, K ^{[1
]}

ARMOUR, E ^{[1
]}

HAINS, C ^{[1
]}

HSIN, W ^{[1
]}

MYERS, DR ^{[1
]}

VAWTER, GA ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.87923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs/AlGaAs vertical-cavity top-surface-emitting lasers with a continuously graded mirror composition have been grown by MOCVD, and planar devices with proton-implant current confinement have been characterized. Continuous grading of the heterointerfaces in the Bragg reflectors eliminated the energy-band discontinuities, thus improving carrier transport and resulting in a substantial reduction in the series resistance and threshold voltage of the laser diodes. These VCSEL's have excellent room-temperature CW electrical characteristics, including some of the lowest series resistance, highest power efficiency, and lowest operating voltages ever reported.

引用

页码：591 / 593

页数：3

共 12 条

[1] TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL CAVITY SURFACE-EMITTING LASERS [J].