EPITAXY OF GAAS BY THE CLOSE-SPACED VAPOR TRANSPORT TECHNIQUE

被引：36

作者：

COTE, D

DODELET, JP

LOMBOS, BA

DICKSON, JI

机构：

[1] CONCORDIA UNIV, MONTREAL H3G 1M8, QUEBEC, CANADA

[2] ECOLE POLYTECH, MONTREAL H3C 3A7, QUEBEC, CANADA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 09期

关键词：

D O I：

10.1149/1.2109051

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1925 / 1934

页数：10

共 58 条

[1]

ABBASOV AS, 1964, AUTOREFERAT DISSERTA

[2]

[Anonymous], [No title captured]

[3] ELECTRICAL-PROPERTIES OF CDTE-FILMS AND JUNCTIONS [J].

ANTHONY, TC ;

FAHRENBRUCH, AL ;

PETERS, MG ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :400-410

[4] GROWTH OF CDTE-FILMS BY CLOSE-SPACED VAPOR TRANSPORT [J].

ANTHONY, TC ;

FAHRENBRUCH, AL ;

BUBE, RH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1296-1302

[5]

Barin I., 2013, THERMOCHEMICAL PROPE

[6]

BARROW GM, 1979, PHYSICAL CHEM

[7] PHOTOVOLTAIC PROPERTIES OF 5 II-VI HETEROJUNCTIONS [J].

BUCH, F ;

FAHRENBRUCH, AL ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1596-1602

[8] EPITAXIAL GAAS BY CLOSE SPACE VAPOR TRANSPORT [J].

CHAVEZ, F ;

MIMILAARROYO, J ;

BAILLY, F ;

BOURGOIN, JC .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6646-6651

[9] COPPER INDIUM DISULFIDE FILMS BY CLOSE SPACING CHEMICAL-TRANSPORT [J].

CHU, TL ;

CHU, SS ;

CHIEN, CP ;

LO, DH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :2020-2022

[10]

Cotton F.A., 1972, ADV INORGANIC CHEM

← 1 2 3 4 5 6 →