VALENCE-BAND COUPLING IN THIN (GA,IN)AS-ALAS STRAINED QUANTUM-WELLS

被引：26

作者：

GIL, B ^{[1
]}

LEFEBVRE, P ^{[1
]}

BORING, P ^{[1
]}

MOORE, KJ ^{[1
]}

DUGGAN, G ^{[1
]}

WOODBRIDGE, K ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.44.1942

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Model representations of varying complexity are used to describe the band structure of semiconductor quantum wells and superlattices. However, the physics of valence-band-confined states is usually restricted to the upper GAMMA-8-upsilon band. We report spectroscopic measurements of the light- to heavy-hole splitting in (Ga,In)As-AlAs strained multiple quantum wells. The results are compared to two types of theoretical calculations: (i) within the framework of the usual approximations, and (ii) taking account of the GAMMA-7-upsilon split-off states, which are mixed with the light-hole ones. We demonstrate the crucial influence of the valence-band coupling, by a significant improvement of the agreement between theory and experiments. Competitive effects of thicknesses, potential-well depths, and magnitude of the GAMMA-8-upsilon-GAMMA-7-upsilon splitting are detailed and discussed.

引用

页码：1942 / 1945

页数：4

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