METALORGANIC MOLECULAR-BEAM EPITAXY OF HEAVILY CARBON-DOPED INP USING TERTIARYBUTYLPHOSPHINE AS A CARBON AUTO-DOPING SOURCE

Metalorganic molecular beam epitaxy (MOMBE) of heavily carbon-doped InP was performed by using elemental In and tertiarybutylphosphine (TBP). In this study, TBP was employed as both phosphorus and carbon source, and carbon-doping characteristics in MOMBE growth of InP using TBP were discussed. The electron concentration of carbon-doped InP could be controlled in three orders of magnitude (n=1016-1019cm-3) by only varying the growth temperature. In the growth temperature region investigated, two distinct growth temperatures dependencies of the electron concentration of carbon-doped InP epilayers were observed. It was also found that the carbon incorporation is affected by the TBP cracking temperature. As the TBP cracking temperature increases, the electron concentration increased at fixed growth temperature and also showed less dependence on growth temperature. Moreover, under higher TBP cracking temperature condition, the overall carbon incorporation may be dominated by the more atomiclike decomposed species. © 1995 American Institute of Physics.