DETERMINATION OF URANIUM AND THORIUM IN SEMICONDUCTOR MEMORY MATERIALS BY HIGH FLUENCE NEUTRON-ACTIVATION ANALYSIS

被引：20

作者：

DYER, FF ^{[1
]}

EMERY, JF ^{[1
]}

NORTHCUTT, KJ ^{[1
]}

SCOTT, RM ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF RADIOANALYTICAL CHEMISTRY | 1982年 / 72卷 / 1-2期

关键词：

D O I：

10.1007/BF02516774

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：53 / 67

页数：15

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[10] A NEUTRON-ACTIVATION ANALYSIS STUDY OF THE SOURCES OF TRANSITION GROUP METAL CONTAMINATION IN THE SILICON DEVICE MANUFACTURING PROCESS [J].

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