GALVANOMAGNETIC EFFECT IN ALGAAS/GAAS HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：7

作者：

AINA, L

MATTINGLY, M

PANDE, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 14期

关键词：

D O I：

10.1063/1.97633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：865 / 867

页数：3

共 13 条

[1] THE 2-BAND EFFECT IN CONDUCTION [J].

CHAMBERS, RG .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1952, 65 (395) :903-910

[2]

CHAMD N, 1984, PHYS REV, V30, P4481

[3] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE [J].

CHANG, LL ;

SAKAKI, H ;

CHANG, CA ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1977, 38 (25) :1489-1493

[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[5]

DINGLE R, 1976, 13TH P INT C PHYS SE, P965

[6] PHOTOPUMPED LASER OPERATION OF MO-CVD ALXGA1-XAS NEAR A GAAS QUANTUM WELL (LAMBDA-GREATER-THAN-OR-EQUAL-TO 6200-A, 77-DEGREE-K) [J].

DUPUIS, RD ;

DAPKUS, PD ;

KOLBAS, RM ;

HOLONYAK, N ;

SHICHIJO, H .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :596-598

[7] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].

HIYAMIZU, S ;

SAITO, J ;

NANBU, K ;

ISHIKAWA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L609-L611

[8]

MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P147

[9] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].

PETRITZ, RL .

PHYSICAL REVIEW, 1958, 110 (06) :1254-1262

[10] DEPENDENCE OF THE MOBILITY AND THE CONCENTRATION OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS/N-ALXGA1-XAS HETEROSTRUCTURE ON THE ALAS MOLE FRACTION [J].

SAITO, J ;

NANBU, K ;

ISHIKAWA, T ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L79-L81

← 1 2 →