ON RELATIONSHIP OF SEMICONDUCTOR COMPOUND PROPERTIES AND AVERAGE HEATS OF ATOMISATION

被引：87

作者：

SADAGOPAN, V

GATOS, HC

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(65)90103-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：529 / +

页数：1

共 22 条

[1] BECK PA, 1963, ELECTRONIC STRUCTURE, P222
[2] Benoit C., 1961, SELECTED CONSTANTS R
[3] OPTICAL AND ELECTRICAL PROPERTIES OF TERNARY CHALCOGENIDES
BEUN, JA
LICHTENSTEIGER, M
NITSCHE, R
[J]. PHYSICA, 1961, 27 (05): : 448 - &
[4] BEVER MB, PRIVATE COMMUNICATIO
[5] Brewer L., 1963, ELECT STRUCTURE ALLO, P222
[6] BUSCH GV, 1962, HELV PHYS ACTA, V35, P500
[7] THERMODYNAMIC STUDY OF TIN SULFIDE AND LEAD SULFIDE USING A MASS SPECTROMETER
COLIN, R
DROWART, J
[J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (05) : 1120 - &
[8] GIBSON AF, 1960, PROGR SEMICONDUCTORS, V5, P103
[9] MASS SPECTROMETRIC AND KNUDSEN-CELL VAPORIZATION STUDIES OF GROUP 2B-6B COMPOUNDS
GOLDFINGER, P
JEUNEHOMME, M
[J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1963, 59 (492): : 2851 - &
[10] GOLDFINGER P, 1962, COMPOUND SEMICONDUCT, V1, P483