HIGH-TRANSCONDUCTANCE HETEROSTRUCTURE GA0.47IN0.53AS/INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY

被引：15

作者：

SCHUBERT, EF ^{[1
]}

TSANG, WT ^{[1
]}

FEUER, MD ^{[1
]}

MANKIEWICH, PM ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 03期

关键词：

D O I：

10.1109/55.2070

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：145 / 147

页数：3

共 8 条

[1] HIGH-SPEED ENHANCEMENT MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS EXHIBITING VERY HIGH TRANSCONDUCTANCE [J].

ANTREASYAN, A ;

GARBINSKI, PA ;

MATTERA, VD ;

TEMKIN, H .

APPLIED PHYSICS LETTERS, 1986, 49 (09) :513-515

[2]

ANTREASYAN A, ELECTRON LETT, V22, P1014

[3]

ANTREASYAN A, 1987, APPL PHYS LETT 1007

[4] SILICON-OXIDE ENHANCED SCHOTTKY GATE IN0.53GA0.47AS FETS WITH A SELF-ALIGNED RECESSED GATE STRUCTURE [J].

CHENG, CL ;

LIAO, ASH ;

CHANG, TY ;

CARIDI, EA ;

COLDREN, LA ;

LALEVIC, B .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :511-514

[5] HIGH-EFFICIENCY GAINAS MICROWAVE MISFETS [J].

GARDNER, PD ;

BECHTLE, D ;

NARAYAN, SY ;

COLVIN, SD ;

PACZKOWSKI, J .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :443-446

[6] METAL-INSULATOR-SEMICONDUCTOR DIODES FABRICATED ON INP, INGAASP, AND INGAAS [J].

KOBAYASHI, T ;

SHINODA, Y .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3339-3341

[7] DC AND MICROWAVE CHARACTERISTICS OF AN IN0.53GA0.47AS/IN0.52AL0.48AS MODULATION-DOPED QUASI-MISFET [J].

SEO, KS ;

BHATTACHARYA, PK ;

GLEASON, KR .

ELECTRONICS LETTERS, 1987, 23 (06) :259-260

[8] CHEMICAL BEAM EPITAXIAL-GROWTH OF EXTREMELY HIGH-QUALITY INGAAS ON INP [J].

TSANG, WT ;

DAYEM, AH ;

CHIU, TH ;

CUNNINGHAM, JE ;

SCHUBERT, EF ;

DITZENBERGER, JA ;

SHAH, J ;

ZYSKIND, JL ;

TABATABAIE, N .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :170-172

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