OHMIC CONTACTS TO ZINC TELLURIDE AND THEIR HIGH-TEMPERATURE BEHAVIOR

被引：6

作者：

LUQMAN, MM ^{[1
]}

BROWN, WD ^{[1
]}

HAJGHASSEM, HS ^{[1
]}

机构：

[1] UNIV ARKANSAS,DEPT ELECT ENGN,FAYETTEVILLE,AR 72701

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 02期

关键词：

ELECTRIC CONTACTS; OHMIC - Thermal Effects - SEMICONDUCTING TELLURIUM COMPOUNDS;

D O I：

10.1007/BF02654299

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ohmic contacts to zinc telluride (ZnTe) have been studied as a function of operating temperature and at room temperature following annealing at 150 degree C for extended periods of time. Contacts investigated included Ag-diffused, electroless Au, Ag paste, Cu-graphite and electroless Cu-Au. Of these, the Cu-Au contacts improved with annealing and stabilized after 2 hr at 150 degree C. A copper/gold ratio of 98%/2% yielded a contact resistivity of 0. 28 ohm-cm**2 after stabilizing. Although the other contacts were ohmic, contact resistivity and/or stability was unacceptable.

引用

页码：123 / 126

页数：4

共 9 条

[1] OHMIC CONTACTS TO ZINC TELLURIDE [J].