RECOVERY OF DAMAGE IN RAD-HARD MOS DEVICES DURING AND AFTER IRRADIATION BY ELECTRONS, PROTONS, ALPHAS, AND GAMMA-RAYS

被引：17

作者：

BRUCKER, GJ

VANGUNTEN, O

STASSINOPOULOS, EG

SHAPIRO, P

AUGUST, LS

JORDAN, TM

机构：

[1] NATL SECUR AGCY,FT MEADE,MD

[2] NASA,GODDARD SPACE FLIGHT CTR,GREENBELT,MD 20771

[3] USN,RES LAB,WASHINGTON,DC 20375

[4] EXPTL & MATH PHYS CONSULTANTS,SIMI VALLEY,CA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4157 / 4161

页数：5

共 9 条

[1]

DANCHENKO V, 1982, IEEE T NUCL SCI, V29

[2]

HABING DH, 1973, IEEE T NUCL SCI, V20

[3]

NAPOLI LS, 1982, IEEE T NUCL SCI, V29

[4]

SCHWANK JR, 1983, JUL NUCL SPAC RAD EF

[5]

SIMMONS M, 1971, IEEE T NUCL SCI, V18

[6]

Srour J. R., 1979, IEEE T NUCL SCI, V26

[7]

STASSINOPOULOS EG, 1983, IEEE T NUCL SCI, V30

[8]

STASSINOPOULOS EG, 1983, UNPUB IEEE T NUCL SC, V30

[9] 2-STAGE PROCESS FOR BUILDUP OF RADIATION-INDUCED INTERFACE STATES [J].

WINOKUR, PS ;

BOESCH, HE ;

MCGARRITY, JM ;

MCLEAN, FB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3492-3494

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