ANOMALOUS HALL-EFFECT BELOW THE MAGNETIC-FIELD-INDUCED METAL-INSULATOR-TRANSITION IN NARROW-GAP SEMICONDUCTORS

被引：27

作者：

GOLDMAN, VJ ^{[1
]}

SHAYEGAN, M ^{[1
]}

DREW, HD ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT PHYS & ASTRON,COLLEGE PK,MD 20742

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 57卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.57.1056

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1056 / 1059

页数：4

共 20 条

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