THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS

被引：1913

作者：

HENRY, CH

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 02期

关键词：

D O I：

10.1109/JQE.1982.1071522

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：259 / 264

页数：6

共 15 条

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (01) :44-59

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FLEMING, MW ;

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APPLIED PHYSICS LETTERS, 1981, 38 (07) :511-513

[4] MEASUREMENTS OF LASER LINEWIDTH DUE TO QUANTUM PHASE AND QUANTUM AMPLITUDE NOISE ABOVE AND BELOW THRESHOLD .1. [J].

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[7] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS [J].

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JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3042-3050

[8] MEASUREMENT OF SPECTRUM, BIAS DEPENDENCE, AND INTENSITY OF SPONTANEOUS EMISSION IN GAAS-LASERS [J].

HENRY, CH ;

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[9]

HENRY CH, 1981, J APPL PHYS, V52, P4451

[10]

Landau L.D., 1984, ELECTRODYNAMICS CONT, V2nd ed.

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