RELIEF HOLOGRAMS IN THIN-FILMS OF AMORPHOUS AS-2SE-3 UNDER HIGH LASER EXPOSURES

被引：25

作者：

CHOMAT, M ^{[1
]}

LEZAL, D ^{[1
]}

GREGORA, I ^{[1
]}

SRB, I ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST RADIO ENGN & ELECTR, PRAGUE, CZECHOSLOVAKIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1976年 / 20卷 / 03期

关键词：

D O I：

10.1016/0022-3093(76)90123-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：427 / 437

页数：11

共 9 条

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BERKES, JS ;

ING, SW ;

HILLEGAS, WJ .

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[2]

DENEUFVILLE JP, 1974, J NON-CRYST SOLIDS, V13, P191, DOI 10.1016/0022-3093(74)90091-X

[3]

DENEUFVILLE JP, 1973, 5TH P INT C AM LIQ S

[4] HOLOGRAM STORAGE IN ARSENIC TRISULFIDE THIN FILMS [J].

KENEMAN, SA .

APPLIED PHYSICS LETTERS, 1971, 19 (06) :205-&

[5]

LEZAL D, 1971, COLLECT CZECH CHEM C, V36, P3732

[6] HOLOGRAPHIC STORAGE IN VO2 [J].

ROACH, WR .

APPLIED PHYSICS LETTERS, 1971, 19 (11) :453-&

[7] PROPERTIES AND LIMITATIONS OF HOLOGRAM RECORDING MATERIALS [J].

URBACH, JC ;

MEIER, RW .

APPLIED OPTICS, 1969, 8 (11) :2269-+

[8] ELECTRONIC STRUCTURE OF CRYSTALLINE AND AMORPHOUS AS2S3 AND AS2SE3 [J].

ZALLEN, R ;

DREWS, RE ;

EMERALD, RL ;

SLADE, ML .

PHYSICAL REVIEW LETTERS, 1971, 26 (25) :1564-&

[9]

1972, 67 EL COMM LAB TECHN

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