OBSERVATION OF POWER DEPENDENT LINEWIDTH ENHANCEMENT FACTOR IN 1.55-MU-M STRAINED QUANTUM-WELL LASERS

被引：10

作者：

NAKAJIMA, H

BOULEY, JC

机构：

[1] Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, France Telecom, F-92220 Bagneux

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 20期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19911143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optical power dependence of the linewidth enhancement factor in 1.55-mu-m strained multiquantum well distributed feedback lasers operating at far above the lasing threshold (up to 10.5 times) has been observed. The linewidth enhancement factor, measured through optical injection locking, increases significantly at high power. A correlation between increase in the linewidth enhancement factor and the linewidth floor is shown.

引用

页码：1840 / 1841

页数：2

共 14 条

[1]

Agrawal G. P., 1989, IEEE Photonics Technology Letters, V1, P212, DOI 10.1109/68.36045

[2]

CHARIL J, 1991, UNPUB ECOC IOOC 91 P

[3] LINEWIDTH ENHANCEMENT FACTOR FOR INGAAS/INP STRAINED QUANTUM-WELL LASERS [J].