DENSITY BISTABILITY IN AN INTERACTING ELECTRON-HOLE SYSTEM IN COHERENTLY EXCITED SEMICONDUCTORS

被引:22
作者
IIDA, T
HASEGAWA, Y
HIGASHIMURA, H
AIHARA, M
机构
[1] OSAKA WOMENS UNIV,DEPT NAT SCI,SAKAI,OSAKA 590,JAPAN
[2] YAMAGUCHI UNIV,FAC LIBERAL ARTS,DEPT PHYS,YAMAGUCHI 753,JAPAN
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 15期
关键词
D O I
10.1103/PhysRevB.47.9328
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An electron-hole system in a direct-gap semiconductor that is coherently excited by a high-intensity laser is investigated. The stationary state of the system in the presence of laser field is described by Bogolyubov quasiparticles. Using a mean-field approximation, we derive a set of basic equations including electron-electron, hole-hole, and electron-hole screened Coulomb interactions. The screening effects are incorporated self-consistently on the basis of a quasistatic random-phase approximation. The stationary state has a fixed chemical potential and is controlled by the frequency of the laser field. By numerical analysis of the basic equations, we show that a resonatorless bistability occurs; that is, an electron-hole pair-density bistability with respect to the excitation energy is shown to be caused by many-body effects via the screened Coulomb interaction. We clarify how the stationary state changes its entity depending on the frequency and intensity of the laser field, and how such a characteristic behavior is observed in optical spectra of probe light.
引用
收藏
页码:9328 / 9337
页数:10
相关论文
共 14 条
[1]   DYNAMIC STARK-EFFECT IN INTERACTING ELECTRON-HOLE SYSTEMS - LIGHT-ENHANCED EXCITONS [J].
COMTE, C ;
MAHLER, G .
PHYSICAL REVIEW B, 1986, 34 (10) :7164-7173
[2]  
GALITSKII VM, 1970, ZH EKSP TEOR FIZ, V30, P117
[3]   BISTABILITY OF THE ELECTRON-HOLE PLASMA-DENSITY IN A STRONG ELECTROMAGNETIC-FIELD [J].
HARBICH, T ;
MAHLER, G .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 117 (02) :635-644
[4]   THE ELECTRON-HOLE PLASMA IN A STRONG ELECTROMAGNETIC-FIELD - OPTICAL-PROPERTIES IN A SIMPLIFIED MODEL [J].
HARBICH, T ;
MAHLER, G .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 104 (01) :185-191
[5]   ELECTRON THEORY OF THE OPTICAL-PROPERTIES OF LASER-EXCITED SEMICONDUCTORS [J].
HAUG, H ;
SCHMITTRINK, S .
PROGRESS IN QUANTUM ELECTRONICS, 1984, 9 (01) :3-100
[6]  
Haug H, 1988, OPTICAL NONLINEARITI
[7]   RESONATORLESS OPTICAL BISTABILITY BASED ON INCREASING NONLINEAR ABSORPTION [J].
HENNEBERGER, F ;
ROSSMANN, H .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 121 (02) :685-693
[8]  
KOCH SW, 1985, J LUMIN, V30, P232, DOI 10.1016/0022-2313(85)90055-9
[9]   RESONATORLESS OPTICAL BISTABILITY IN DIRECT-BAND-GAP SEMICONDUCTORS AS AN EXAMPLE OF BISTABILITY DRIVEN BY A PHASE-TRANSITION [J].
KOCHELAP, VA ;
KUZNETSOV, AV .
PHYSICAL REVIEW B, 1990, 42 (12) :7497-7503
[10]  
Madelung O., 1991, DATA SCI TECHNOLOGY