PENDELLOSUNG FRINGES IN ELASTICALLY DEFORMED SILICON

[1] Authier A, 1961, B SOC FR MINERAL CR, V84, P51

[2] LATTICE CONSTANTS + THERMAL EXPANSIVITIES OF SILICON + OF CALCIUM FLUORIDE BETWEEN 6 DEGREES + 322 DEGREES K [J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (08) : 2324 - &

[3] DYNAMICAL DIFFRACTION OF X RAYS BY PERFECT CRYSTALS [J]. REVIEWS OF MODERN PHYSICS, 1964, 36 (03) : 681 - &

[4] STARKE ABLENKUNG VON RONTGEN-WELLENFELDSTRAHLEN IN ELASTISCH GEBOGENEN KRISTALLEN [J]. ZEITSCHRIFT FUR PHYSIK, 1964, 177 (05): : 529 - &

[5] THEORIE DER AUSBREITUNG VON RONTGEN-WELLENFELDSTRAHLEN IM SCHWACH DEFORMIERTEN KRISTALLGITTER [J]. ZEITSCHRIFT FUR PHYSIK, 1964, 177 (04): : 385 - &

[6] ABSORPTION UND WEG INTERFERIERENDER RONTGENSTRAHLEN IM SCHWACH DEFORMIERTEN KRISTALLGITTER [J]. ZEITSCHRIFT FUR PHYSIK, 1959, 156 (03): : 189 - 199

[7] BORRMANN G, 1960, RONTGENWELLENFELDER

[8] BRENNER A, 1954, MET FINISH, V52, P68

[9] COLE H, 1959, PHYS REV, V116, P868

[10] LATTICE CONSTANTS AND THERMAL EXPANSION OF SILICON UP TO 900-DEGREES-C BY X-RAY METHOD [J]. PHYSICA STATUS SOLIDI, 1962, 2 (08): : 984 - 987

[1] Authier A, 1961, B SOC FR MINERAL CR, V84, P51

[2] LATTICE CONSTANTS + THERMAL EXPANSIVITIES OF SILICON + OF CALCIUM FLUORIDE BETWEEN 6 DEGREES + 322 DEGREES K [J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (08) : 2324 - &

[3] DYNAMICAL DIFFRACTION OF X RAYS BY PERFECT CRYSTALS [J]. REVIEWS OF MODERN PHYSICS, 1964, 36 (03) : 681 - &

[4] STARKE ABLENKUNG VON RONTGEN-WELLENFELDSTRAHLEN IN ELASTISCH GEBOGENEN KRISTALLEN [J]. ZEITSCHRIFT FUR PHYSIK, 1964, 177 (05): : 529 - &

[5] THEORIE DER AUSBREITUNG VON RONTGEN-WELLENFELDSTRAHLEN IM SCHWACH DEFORMIERTEN KRISTALLGITTER [J]. ZEITSCHRIFT FUR PHYSIK, 1964, 177 (04): : 385 - &

[6] ABSORPTION UND WEG INTERFERIERENDER RONTGENSTRAHLEN IM SCHWACH DEFORMIERTEN KRISTALLGITTER [J]. ZEITSCHRIFT FUR PHYSIK, 1959, 156 (03): : 189 - 199

[7] BORRMANN G, 1960, RONTGENWELLENFELDER

[8] BRENNER A, 1954, MET FINISH, V52, P68

[9] COLE H, 1959, PHYS REV, V116, P868

[10] LATTICE CONSTANTS AND THERMAL EXPANSION OF SILICON UP TO 900-DEGREES-C BY X-RAY METHOD [J]. PHYSICA STATUS SOLIDI, 1962, 2 (08): : 984 - 987