QUASILOCAL IMPURITY STATES IN PB1-XSNXTE AND PBSE0.08TE0.92 LIQUID-PHASE EPITAXIAL LAYERS DOPED WITH GROUP-III ELEMENTS

被引：22

作者：

FEIT, Z

EGER, D

ZEMEL, A

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.31.3903

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3903 / 3909

页数：7

共 26 条

[1] -]K . -]P MODEL FOR MAGNETIC ENERGY-LEVELS IN PBTE AND PB1-XSNXTE
ADLER, MS
HEWES, CR
SENTURIA, SD
[J]. PHYSICAL REVIEW B, 1973, 7 (12): : 5186 - 5195
[2] AKIMOV BA, 1979, SOV PHYS SEMICOND+, V13, P441
[3] GAIN-FREQUENCY-CURRENT RELATION FOR PB1-X SNX TE DOUBLE HETEROSTRUCTURE LASERS
ANDERSON, WW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (07) : 532 - 543
[4] ANDREEV YV, 1975, SOV PHYS SEMICOND+, V9, P1235
[5] AVERKIN AA, 1971, SOV PHYS SEMICOND+, V5, P75
[6] BUSHMARINA GS, 1977, SOV PHYS SEMICOND+, V11, P1098
[7] ELECTRICAL TRANSPORT-PROPERTIES OF AG-DOPED P-TYPE PBTE EPITAXIAL THIN-FILMS
DAWAR, AL
PARADKAR, SK
KUMAR, P
TANEJA, OP
MATHUR, PC
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (01): : 227 - 232
[8] Dimmock J., 1971, PHYSICS SEMIMETALS N, P319
[9] DRABKIN IA, 1975, SOV PHYS SEMICOND+, V8, P1261
[10] TEMPERATURE-DEPENDENCE OF MOBILITY IN HEAVILY DOPED N-TYPE PBTE LAYERS GROWN BY LPE
FEIT, Z
ZEMEL, A
EGER, D
SZAPIRO, S
[J]. PHYSICS LETTERS A, 1983, 98 (8-9) : 451 - 454