EVALUATION OF DEVICE CHARGING IN ION-IMPLANTATION

Device charging in the ion implantation is evaluated by using two different types of electrically erasable-programmable read-only memory (EEPROM) devices and two different types of metal-oxide-semiconductor (MOS) capacitors. The averaged charging voltage is measured by the turn-on voltage shift (DELTA-V(T)) of a grounded source EEPROM, while the transient charging effect is detected by a floating source EEPROM. The yield of the MOS capacitor reaches its maximum when the grounded source EEPROM shows the minimum DELTA-V(T). The effects of the charge-collecting electrode area and substrate type of the MOS capacitor are also examined.