CHEMICALLY MODIFIED ION-SENSITIVE FIELD-EFFECT TRANSISTORS - APPLICATION IN FLOW-INJECTION ANALYSIS CELLS WITHOUT POLYMERIC ENCAPSULATION AND WIRE BONDING

被引：9

作者：

COBBEN, PLHM ^{[1
]}

EGBERINK, RJM ^{[1
]}

BOMER, JG ^{[1
]}

SUDHOLTER, EJR ^{[1
]}

BERGVELD, P ^{[1
]}

REINHOUDT, DN ^{[1
]}

机构：

[1] UNIV TWENTE,BIO INFORMAT LAB,7500 AE ENSCHEDE,NETHERLANDS

来源：

ANALYTICA CHIMICA ACTA | 1991年 / 248卷 / 02期

关键词：

FLOW SYSTEM; FLOW CELLS; ION-SELECTIVE FIELD-EFFECT TRANSISTORS;

D O I：

10.1016/S0003-2670(00)84646-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

New wall jet and flow-through cells have been developed which can be used for flow-injection analysis using chemically modified ion-sensitive field-effect transistors (CHEMFETs). In these designs traditional bonding and encapusulation with epoxy resin have become superfluous. This ISFET chip has been designed to meet the requirements of these two cell types. Measurements with plasticized PVC-valinomycin-modified CHEMFETs in these flow cells are presented. The effects of flow-rate and sample size on the recorded peak were investigated. The operational performance of the wall jet and flow-through cells were compared; the recorded peaks with the wall jet cell are less symmetrical than those with the flow-through cell.

引用

页码：307 / 313

页数：7

共 37 条

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