CRITICAL-BEHAVIOR OF SI-P AT THE METAL-INSULATOR-TRANSITION - REPLY

被引：38

作者：

STUPP, H

HORNUNG, M

LAKNER, M

MADEL, O

机构：

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.72.2122

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2122 / 2122

页数：1

共 8 条

[1]

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[2]

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[6]

ROSENBAUM TF, 1994, COMMENT PHYS REV LET, V72, P2121

[7] POSSIBLE SOLUTION OF THE CONDUCTIVITY EXPONENT PUZZLE FOR THE METAL-INSULATOR-TRANSITION IN HEAVILY-DOPED UNCOMPENSATED SEMICONDUCTORS [J].

STUPP, H ;

HORNUNG, M ;

LAKNER, M ;

MADEL, O ;

VONLOHNEYSEN, H .

PHYSICAL REVIEW LETTERS, 1993, 71 (16) :2634-2637

[8] MEASUREMENTS OF CONDUCTIVITY NEAR THE METAL-INSULATOR CRITICAL-POINT [J].

THOMAS, GA ;

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