PREPARATION AND SOME PROPERTIES OF HIGHLY RESISTIVE A-SI-H-F FILM

被引：4

作者：

NAKAYAMA, Y

AKIYAMA, K

KAWAMURA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 11期

关键词：

D O I：

10.1143/JJAP.22.L754

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L754 / L756

页数：3

共 6 条

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[3]

MATSUMURA H, 1983, JPN J APPL PHYS S, V22, P523

[4] HIGH-RATE DEPOSITION OF A-SI - H FILM USING THE DECOMPOSITION OF MONO-SILANE [J].

NAKAYAMA, Y ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (10) :L604-L606

[5] INFRARED-SPECTRA OF AMORPHOUS SILICON-FLUORINE ALLOYS PREPARED BY SPUTTERING IN FLUOROSILANE-ARGON GAS-MIXTURE [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L265-L268

[6] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE [J].

TIEDJE, T ;

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