ELECTRON-HOLE PLASMA IN DIRECT-GAP GA1-XALXAS AND K-SELECTION RULE

被引：74

作者：

CAPIZZI, M

MODESTI, S

FROVA, A

STAEHLI, JL

GUZZI, M

LOGAN, RA

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND

[2] UNIV MILAN,DEPARTIMENTO FIS,I-20133 MILAN,ITALY

[3] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.29.2028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2028 / 2035

页数：8

共 52 条

[1] Baldereschi A., 1980, Semi-Insulating III-V Materials, P288
[2] THEORY OF ELECTRON-HOLE LIQUID IN SEMICONDUCTORS
BENI, G
RICE, TM
[J]. PHYSICAL REVIEW B, 1978, 18 (02): : 768 - 785
[3] AUGER RECOMBINATION IN GAAS AN GASB
BENZ, G
CONRADT, R
[J]. PHYSICAL REVIEW B, 1977, 16 (02): : 843 - 855
[4] COULOMB EFFECTS ON GAIN SPECTRUM OF SEMICONDUCTORS
BRINKMAN, WF
LEE, PA
[J]. PHYSICAL REVIEW LETTERS, 1973, 31 (04) : 237 - 240
[5] ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS
BRINKMAN, WF
RICE, TM
[J]. PHYSICAL REVIEW B, 1973, 7 (04): : 1508 - 1523
[6] CAPIZZI M, 1982, PHYSICA B C, V117, P333
[7] ELECTRON-HOLE PLASMA IN PHOTO-EXCITED INDIRECT-GAP ALXGA1-XAS
COHEN, E
STURGE, MD
OLMSTEAD, MA
LOGAN, RA
[J]. PHYSICAL REVIEW B, 1980, 22 (02): : 771 - 777
[8] COMBESCOT M, 1982, PHYS REV LETT, V49, P1743, DOI 10.1103/PhysRevLett.49.1743
[9] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON
COMBESCOT, M
NOZIERES, P
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17): : 2369 - +
[10] SPONTANEOUS AND STIMULATED CARRIER LIFETIME (77 DEGREES K) IN A HIGH-PURITY, SURFACE-FREE GAAS EPITAXIAL LAYER
DAPKUS, PD
HOLONYAK, N
BURNHAM, RD
KEUNE, DL
BURD, JW
LAWLEY, KL
WALLINE, RE
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4194 - +