CARRIER LIFETIME INCREASE IN SILICON BY GETTERING WITH A MEV-IMPLANTED CARBON-RICH LAYER

被引：5

作者：

SKORUPA, W ^{[1
]}

KOGLER, R ^{[1
]}

SCHMALZ, K ^{[1
]}

机构：

[1] INST SEMICOND PHYS,O-1200 FRANKFURT,GERMANY

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 22期

关键词：

Carrier lifetime; Silicon;

D O I：

10.1049/el:19901222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The gettering efficiency of silicon implanted with carbon ions in the energy range 0.33-10 MeV was tested by carrier lifetime measurements. After an intentional contamination of the sample back side with gold as a lifetime killer, we found values for the generation lifetime of the minority carriers on the front side higher by 1-2 orders of magnitude as compared with unimplanted silicon. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1898 / 1899

页数：2

共 4 条

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APPLIED PHYSICS LETTERS, 1988, 52 (12) :1023-1025

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