MOBILITY AND CONCENTRATION OF CARRIERS IN SEMIINSULATING GALLIUM-ARSENIDE

A new approach to the analysis of conduction mechanisms in high-resistivity low-mobility GaAs is presented. It is based on the fitting of Hall mobility and concentration data in the experimental temperature range, through an iteration procedure, and the main advantages are: i) the immediate understanding of the cause of reduced mobility; ii) the validity over the RT-600 K temperature range; iii) the possibility of achieving the n,p vs T and mu //n, mu //p vs T characteristics.