CHARGE MIGRATION CONTRIBUTION TO THE SENSITIVE LAYER OF A SILICON DETECTOR

被引：15

作者：

CROITORU, N ^{[1
]}

RANCOITA, PG ^{[1
]}

SEIDMAN, A ^{[1
]}

机构：

[1] CERN,CH-1211 GENEVA 23,SWITZERLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1985年 / 234卷 / 03期

关键词：

D O I：

10.1016/0168-9002(85)90989-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：443 / 450

页数：8

共 13 条

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