EFFECT OF PRESSURE ON THE ELECTRICAL-RESISTIVITY OF URU2SI2

被引：17

作者：

KAGAYAMA, T

OOMI, G

IKI, K

MORI, N

ONUKI, Y

KOMATSUBARA, T

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 106,JAPAN

[2] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

[3] TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1994年 / 213卷

关键词：

D O I：

10.1016/0925-8388(94)90940-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electrical resistivity rho(T) of the concentrated Kondo compound URu2Si2 has been measured at high pressure up to 80 kbar in order to examine the stability of the electronic state at high pressure. The pressure dependence of volume is also observed by X-ray diffraction. The Gruneisen parameters for the Neel temperature and the Kondo temperature are estimated on the basis of the results in the present work. The present analysis emphasizes the itinerant character of 5f electrons of URu2Si2.

引用

页码：387 / 390

页数：4

共 16 条

[1] CONCENTRATED KONDO SYSTEMS [J].