THERMOPHONIC INVESTIGATION OF SWITCHING AND MEMORY PHENOMENA IN THICK AMORPHOUS-CHALCOGENIDE FILMS

被引：4

作者：

KOTZ, J ^{[1
]}

SHAW, MP ^{[1
]}

机构：

[1] WAYNE STATE UNIV,DEPT PHYS,DETROIT,MI 48202

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 02期

关键词：

D O I：

10.1063/1.93848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：199 / 201

页数：3

共 28 条

[1] SIZE CONSIDERATIONS IN DESIGN OF CELLS FOR PHOTOACOUSTIC SPECTROSCOPY .2. PULSED EXCITATION RESPONSE [J].

AAMODT, LC ;

MURPHY, JC .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3036-3045

[2] MECHANISM OF THRESHOLD SWITCHING IN AMORPHOUS ALLOYS [J].

ADLER, D ;

HENISCH, HK ;

MOTT, N .

REVIEWS OF MODERN PHYSICS, 1978, 50 (02) :209-220

[3]

ADLER D, 1972, J VAC SCI TECHNOL, V9, P1181

[4]

ADLER D, 1980, J APPL PHYS, V51, P328

[5] SIMPLE TEST FOR DOUBLE INJECTION INITIATION OF SWITCHING [J].

BALBERG, I .

APPLIED PHYSICS LETTERS, 1970, 16 (12) :491-&

[6] ELECTRICAL CHARACTERISTICS AND THRESHOLD SWITCHING IN AMORPHOUS-SEMICONDUCTORS [J].

BUCKLEY, WD ;

HOLMBERG, SH .

SOLID-STATE ELECTRONICS, 1975, 18 (02) :127-&

[7]

Fritzsche H., 1970, Journal of Non-Crystalline Solids, V2, P393, DOI 10.1016/0022-3093(70)90156-0

[8] SWITCHING AND TEMPERATURE EFFECTS IN LATERAL FILMS OF AMORPHOUS SILICON [J].

FULENWIDER, JE ;

HERSKOWITZ, GJ .

PHYSICAL REVIEW LETTERS, 1970, 25 (05) :292-+

[9] TRANSIENT CHARACTERISTICS OF SEMICONDUCTING GLASS DIODES [J].

HOMMA, K .

APPLIED PHYSICS LETTERS, 1971, 18 (05) :198-&

[10]

KOTZ J, 1982, THESIS WAYNE STATE U

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