CONDUCTANCE PLATEAUS IN THE QUANTIZED HALL-EFFECT

被引:21
作者
HEINONEN, O
TAYLOR, PL
机构
来源
PHYSICAL REVIEW B | 1983年 / 28卷 / 10期
关键词
D O I
10.1103/PhysRevB.28.6119
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:6119 / 6122
页数:4
相关论文
共 6 条
[1]  
GIULIANI GF, UNPUB
[2]   QUANTIZED HALL CONDUCTANCE, CURRENT-CARRYING EDGE STATES, AND THE EXISTENCE OF EXTENDED STATES IN A TWO-DIMENSIONAL DISORDERED POTENTIAL [J].
HALPERIN, BI .
PHYSICAL REVIEW B, 1982, 25 (04) :2185-2190
[3]  
LAUGHLIN RB, 1981, PHYS REV B, V23, P5632, DOI 10.1103/PhysRevB.23.5632
[4]   THEORY OF QUANTIZED HALL-EFFECT AT LOW-TEMPERATURES [J].
LURYI, S ;
KAZARINOV, RF .
PHYSICAL REVIEW B, 1983, 27 (02) :1386-1389
[5]   QUANTIZED HALL-EFFECT AT LOW-TEMPERATURES [J].
PAALANEN, MA ;
TSUI, DC ;
GOSSARD, AC .
PHYSICAL REVIEW B, 1982, 25 (08) :5566-5569
[6]  
VONKLITZING K, 1980, PHYS REV LETT, V45, P494, DOI 10.1103/PhysRevLett.45.494