2-PHONON BOUND-STATE FOR THE HYDROGEN VIBRATION ON THE H/SI(111) SURFACE

被引:117
作者
GUYOTSIONNEST, P
机构
[1] Laboratoire Pour l'Utilisation du Rayonnement Electromagnétique, Centre Universitaire Paris(enSud
关键词
D O I
10.1103/PhysRevLett.67.2323
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The upsilon-1 --> 2 hot band of the Si-H stretching vibration of the H/Si(111) 1 x 1 surface is investigated using picosecond sum-frequency generation. The hot band is probed after directly exciting the fundamental upsilon-0 --> 1 and is found to be 90 cm-1 lower than the fundamental. The shift is consistent with the Si-H anharmonicity in the gas phase and a small dispersion (11 cm-1) for the surface layer, implying a strong two-phonon bound state.
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页码:2323 / 2326
页数:4
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