1ST OBSERVATION OF THE TWO-DIMENSIONAL PROPERTIES OF THE ELECTRON-GAS IN GA0.49IN0.51P/GAASHETEROJUNCTIONS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:37
作者
RAZEGHI, M
MAUREL, P
OMNES, F
BENARMOR, S
DMOWSKI, L
PORTAL, JC
机构
[1] CNRS,INST SCI APPL LYON,F-31077 TOULOUSE,FRANCE
[2] CNRS,SERV NATL CHAMPS INTENSES,F-38042 GRENOBLE,FRANCE
[3] POLISH ACAD SCI,HIGH PRESSURE RES CTR,PL-01142 WARSAW,POLAND
关键词
D O I
10.1063/1.96999
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1267 / 1269
页数:3
相关论文
共 9 条
[2]   STUDY OF PERSISTENT PHOTOCONDUCTIVITY EFFECT IN N-TYPE SELECTIVELY DOPED ALGAAS/GAAS HETEROJUNCTION [J].
KASTALSKY, A ;
HWANG, JCM .
SOLID STATE COMMUNICATIONS, 1984, 51 (05) :317-322
[3]   EFFECT OF ELASTIC STRAIN ON ENERGY-BAND GAP AND LATTICE-PARAMETER IN III-V-COMPOUNDS [J].
OLSEN, GH ;
NUESE, CJ ;
SMITH, RT .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5523-5529
[4]  
RAZEGHI M, 1984, TECHNOLOGY CHEM MATE, P193
[5]  
Scott G B, 1979, I PHYS C SER, V45, P181
[6]  
STORMER HL, 1981, APPL PHYS LETT, V39, P912, DOI 10.1063/1.92604
[7]   OBSERVATION OF INTERSUBBAND SCATTERING IN A TWO-DIMENSIONAL ELECTRON-SYSTEM [J].
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
SOLID STATE COMMUNICATIONS, 1982, 41 (10) :707-709
[8]   IMPORTANCE OF LATTICE MISMATCH IN GROWTH OF GAXIN1-XP EPITAXIAL CRYSTALS [J].
STRINGFELLOW, GB .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3455-+
[9]  
YOSHINO J, 1980, JPN J APPL PHYS, V20, pL290