MINORITY-CARRIER INJECTION INTO HEAVILY DOPED SILICON

被引：25

作者：

SLOTBOOM, JW ^{[1
]}

机构：

[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 02期

关键词：

D O I：

10.1016/0038-1101(77)90069-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：167 / 170

页数：4

共 9 条

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[3]

DEGRAAFF HC, TO BE PUBLISHED

[4]

KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P136

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MERTENS, RP ;

DEMAN, HJ ;

VANOVERS.RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) :772-778

[6] THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON [J].

PUTLEY, EH ;

MITCHELL, WH .

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[7] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J].

SLOTBOOM, JW ;

DEGRAAFF, HC .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :857-862

[8]

SLOTBOOM JW, TO BE PUBLISHED

[9] TRANSPORT EQUATIONS IN HEAVY DOPED SILICON [J].

VANOVERSTRAETEN, RJ ;

DEMAN, HJ ;

MERTENS, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :290-298

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