GROWTH OF HIGH-QUALITY INP WITH METAL ORGANIC MOLECULAR-BEAM EPITAXY

被引：14

作者：

HEINECKE, H

HOGER, R

BAUR, B

MIKLIS, A

机构：

[1] Siemens AG, Corporate Research, München 83, Otto-Hahn-Ring 6

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 03期

关键词：

Indium compounds; Optical properties of substances; Semiconductor devices and materials; Semiconductor growth;

D O I：

10.1049/el:19900143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter we report on the growth of high quality InP by metal organic molecular beam epitaxy (MOMBE). InP layers were grown exhibiting Hall mobilities of up to 132000 cm2/Vs at T = 77 K with a background free electron concentration of around 2 x 10 14cm-3. These good electrical results were obtained along with a high optical quality. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：213 / 214

页数：2

共 9 条

[1] GROWTH OF HIGH-QUALITY INDIUM-PHOSPHIDE FROM METALORGANIC SOURCES BY MOLECULAR-BEAM EPITAXY [J].