TEMPLATE APPROACHES TO GROWTH OF ORIENTED OXIDE HETEROSTRUCTURES ON SIO2/SI

A template approach to growing highly oriented ferroelectric oxide heterostructures on SiO2/Si substrates is presented. In this method, a thin ''template'' of a layered perovskite is used to induce the growth of the subsequent layers in the desired orientation. The efficacy of this ''template'' approach is illustrated through the example of growth of ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on SiO2/Si. Discrete test capacitors fabricated from these heterostructures grown using the template approach exhibit remnant polarization values in the range of 10-15 mu C/cm(2) and show very little degradation after 10(11) bipolar fatigue cycles. In contrast, test capacitors fabricated without the template layer showed very little crystallographic texture and poor ferroelectric properties.