HIGH-PRESSURE ELECTRICAL-RESISTIVITY OF HGCR2SE4

被引：8

作者：

KISTAIAH, P

MURTHY, KS

RAO, KVK

机构：

来源：

JOURNAL OF THE LESS-COMMON METALS | 1984年 / 98卷 / 01期

关键词：

D O I：

10.1016/0022-5088(84)90291-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：L13 / L15

页数：3

共 8 条

[1] HIGH-PRESSURE CLAMP FOR ELECTRICAL MEASUREMENTS UP TO 8 GPA AND TEMPERATURE DOWN TO 77 K [J].

BANDYOPADHYAY, AK ;

NALINI, AV ;

GOPAL, ESR ;

SUBRAMANYAM, SV .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (01) :136-139

[2]

BRIDGMAN PW, 1952, PHYSICS HIGH PRESSUR

[3] VAPOR GROWTH OF HGCR2SE4 [J].

GIBART, P .

JOURNAL OF CRYSTAL GROWTH, 1978, 43 (01) :21-27

[4] TRANSPORT PROPERTIES OF FERROMAGNETIC SEMICONDUCTOR HGCR2SE4 [J].

GOLDSTEIN, L ;

GIBART, P ;

SELMI, A .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1474-1476

[5] RAMAN-SCATTERING OF HGCR2SE4 [J].

ILIEV, MN ;

ANASTASSAKIS, E ;

ARAI, T .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 86 (02) :717-723

[6] HIGH-PRESSURE SEMICONDUCTOR TO METAL TRANSITION IN CRS AND CRSE [J].

JOSHI, DK ;

KARUNAKARAN, C ;

VAIDYA, SN ;

KARKHANAVALA, MD .

MATERIALS RESEARCH BULLETIN, 1977, 12 (11) :1111-1116

[7]

KISTAIAH P, 1980, NATL ACAD SCI LETT, V3, P91

[8] GALVANOMAGNETIC PROPERTIES OF N-TYPE HGCR2SE4 [J].

SELMI, A ;

GIBART, P ;

GOLDSTEIN, L ;

TOMAS, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :267-272

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